0000000000641634
AUTHOR
A.v. Shorokhov
Influence of dissipative tunneling on the photodielectric effect associated with the excitation of impurity complexes A+ + e in a quasi-zero-dimensional structure
Effect of tunneling decay for the quasi-stationary A+-state, in an impurity complex A+ + e (a hole, localized on a neutral acceptor, interacting with an electron, localized in the ground state of a quantum dot) on the photodielectric effect, associated with the excitation of impurity complexes A+ + e in a quasi-zero-dimensional structure, has been studied in the zero-radius potential model in the one-instanton approximation. Calculation of the binding energy of a hole in an impurity complex A+ + e was performed in the zero radius potential model in the adiabatic approximation. It is shown that as the probability of dissipative tunneling increases, the binding energy of a hole in a complex A…
Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes
Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes “A++e” (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A+-state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A+-state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from…