0000000000644662

AUTHOR

F. Giannazzo

Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films

In this work, the formation of micrometer-size crystalline monolayer (1L) MoS2 flakes with triangular shape and a central multilayer core is obtained by the sulfurization at 800 °C of pre-deposited ultrathin MoOx films (1.2–1.8 nm) on c-sapphire substrates. The thickness uniformity, crystalline quality, doping and strain distribution in the MoS2 flakes as a function of the initial MoOx thickness was evaluated by micro-Raman (μR) mapping. The excellent crystalline quality of the triangular 1L-MoS2 flakes was confirmed by micro-photoluminescence (μPL) maps, showing a very intense peak at ∼1.85 eV, that decreases in the central part, as expected for multilayers MoS2. A biaxial strain of ∼0.38–…

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Interfacial disorder of graphene grown at high temperatures on 4H-SiC(000-1)

This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 ºC) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy showed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr gro…

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Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between $Au$ and chalcogen atoms is the key to achieve this nearly perfect 1L exfoliation yield. On the other hand, it may affect significantly the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L $MoS_{2}$ exfoliated on ultra-flat $Au$ films ($0.16-0.21 nm$ roughness) and finally transferre…

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