0000000000650377
AUTHOR
Giusy Valvo
Design and development of a fNIRS system prototype based on SiPM detectors
Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board …
Extensive electrical model of large area silicon photomultipliers
Abstract In this paper the full electrical model of silicon photomultipliers fabricated at STMicroelectronics Catania R&D clean room facilities is presented. An accurate investigation on both SiPM single microcell and entire SiPM structure to extrapolate all the electrical elements has been executed by means of dedicated characterizations carried out on appropriate layout structure. The electrical simulations results are compared to the experimental data showing a good fit and therefore verifying the accuracy of the proposed model. This model can be used to describe all the SiPMs with different sizes manufactured using the same technology. Moreover, starting from this extensive electrical m…
Preliminary radiation hardness tests of single photon Si detectors
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…