Unraveling the strain state of GaN down to single nanowires

2016

International audience; GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaN NW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain-defined as [c/a = (c/a)(o)]/(c/a)(o)-within the experimental accuracy amounting to 1.25 x 10(-4). However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substr…