0000000000827124

AUTHOR

Kink Mf

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Luminescence of gamma-radiation-induced defects in alpha-quartz

2004

Optical transitions associated with gamma-radiation-induced defects in crystalline a-quartz were investigated by photoluminescence excited by both pulsed synchrotron radiation and steady-state light. After a 10 MGy gamma-dose we observed two emissions at 4.9 eV (ultraviolet band) and 2.7 eV (blue band) excitable in the range of the induced absorption band at 7.6 eV. These two luminescence bands show a different temperature dependence: the ultraviolet band becomes bright below 80 K; the blue band increases below 180 K, but drops down below 80 K. Both emissions decay in a timescale of a few ns under pulsed excitation, however the blue band could also be observed in slow recombination processe…

ELECTRON-PARAMAGNETIC-RESONANCEAMORPHOUS-SILICON DIOXIDEOPTICAL-ABSORPTIONGLASSESSYNTHETIC SILICAPHOTOLUMINESCENCESIO2BANDOXYGEN-DEFICIENT CENTERSIRRADIATION
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