0000000000849200
AUTHOR
L. Marchini
Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique
Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible, thereby allowing larger single grains with a lower dislocation density to be obta…
Charge Transport Properties in CZT Detectors Grown by the Vertical Bridgman Technique
Great efforts are being presently devoted to the development of CdTe and CdZnTe detectors for a large variety of applications, such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). By this technique the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible thereby allowing larger single grains with a lower dislocation density to be obtained. Several mono…