0000000000883977
AUTHOR
Amin Bahrami
Mechanical, thermal and electrical properties of monolayer and bilayer graded Al/SiC/rice husk ash (RHA) composite
Abstract The mechanical, electrical and thermal properties as well as thermal expansion of Al/SiC/RHA (rice husk ash) monolayer and bilayer composite have been studied using the Taguchi method and analysis of variance (ANOVA). The parameter that most significantly affects the modulus of elasticity of Al/SiC/RHA bilayer composites is processing time, with contribution percentages of 68 and 27% calculated from stress-strain graphs and ultrasonic method, respectively. However, the factor which mostly affects bending strength, CTE value and electrical resistivity of composites is process temperature with contribution percentages of 32, 28, and 22%, respectively. The projected values for modulus…
Bilayer graded Al/B4C/rice husk ash composite: Wettability behavior, thermo-mechanical, and electrical properties
In this study, wettability behavior of B4C substrate as well as B4C/crystalline rice husk ash and B4C/amorphous rice husk ash substrates with two aluminum alloys were studied. The electrical resistivity, thermal expansion coefficients, and thermal diffusivity of bilayer Al/B4C/rice husk ash composite fabricated by one-step pressureless infiltration were measured and the obtained data were systemically analyzed using the Taguchi method and analysis of variance. Boron carbide substrates after addition of amorphous or crystalline rice husk ash display good wettability with molten aluminum alloys. The results show that, electrical resistivity of Al/B4C/rice husk ash composites is mainly influe…
Electrical and thermomechanical properties of CVI- Si3N4 porous rice husk ash infiltrated by Al-Mg-Si alloys
Abstract The effect of following processing parameters on the electrical and thermomechanical properties of Al/Si3N4 deposited silica composites was investigated using the Taguchi method and analysis of variance (ANOVA): infiltration temperature and time, atmosphere, effect of Si3N4 coating, porosity content in the preforms, and magnesium content in the alloy. The contributions of each of the parameters to modulus of elasticity, electrical resistivity, coefficient of thermal expansion (CTE), and thermal diffusivity of the resulting composites were determined. The maximum modulus of elasticity and electrical resistivity of obtained composites were 265 GPa, and 1.37 × 10−3 Ω m, respectively. …
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…