0000000000929407
AUTHOR
M. Dolores Cubells-beltran
CMOS Capacitance-to-Time Converter-Based Interface for Differential Capacitive Sensors
This paper presents pre-layout simulation results on a CMOS implementation of a capacitance-to-time converter-based electronic interface for differential capacitive sensors. Its simple architecture, comprising only three operational amplifiers (OA) and a digital mixer (inverted XOR gate) allows, by properly setting the values of seven biasing resistors, to fit the working range anywhere from few fF to hundreds of pF, giving the output quasi-digital signals (T and PW) in the useful μs-ms range (appropriate for direct interfacing with general purposes microcontrollers). A couple of illustrative examples are provided.
Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order …