Crystallographic analysis of extended defects in diamond-type crystals

2005

Abstract To investigate irradiation-induced Si amorphization during its initial stages, we have performed a classical molecular-dynamics (MD) calculation for the case of self-irradiation by 5 keV ions at a low temperature of 100 K. We examined the geometry of self-interstitial atom (SIA) clusters using the pixel mapping (PM) method, on the output data of MD calculations. Perfect crystalline silicon (c-Si) is amorphized by self-irradiation, and we observe that many SIA are produced. During sequential self-irradiation, the most frequently observed species were isolated SIA, i.e. I1 (monomer). The fractions of SIA clusters decreased as I2 (dimer), I3 (trimer), and I4 (tetramer) clusters, respe…