The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

This research is funded by the Latvian Council of Science project “Epitaxial Ga2O3 thin films as ultrawide bandgap topological transparent electrodes for ultraviolet optoelectronics” No. lzp-2020/1-0345. S.O. was supported by the European Union’s Horizon 2020 program, under Grant Agreement No. 856705 (ERA Chair “MATTER”). Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART².