Modeling propagation in high-power microwave devices

1999

A New Planar Microstrip Resonator for Microwave Circuits: The Quasi-Fractal Microstrip Resonator

1999

a new shape for microwave planar circuits using the self-similarity of the fractal geometry is presented. This new shape allows the generation of numerous resonant frequencies for this microwave planar resonator due to the surfaces encasilng. The resonant frequency assessment can be useful to concept specific filters or wide frequency band matching loads as examples, without consuming circuit surface.

Quasifractal planar microstrip resonators for microwave circuits

1999

We propose a new shape for microwave planar circuits using the self-similarity of the fractal geometry. This new shape allows the generation of numerous resonant frequencies for this microwave planar resonator due to the surface's encasing. The resonant frequency assessment can be useful for the concept of filters or wide frequency band matching loads as examples, without consuming circuit surface. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 21: 433–436, 1999.

Study of ν1/ν3 interacting bands of silane : analysis of infrared and Raman spectra

1990

International audience; The ν1/ν3 interacting bands of natural silane have been studied by Fourier transform spectroscopy and stimulated Raman spectroscopy, respectively, in the regions 2040–2320 and 2180–2187 cm−1. These data combined with available microwave observations have been analyzed using a reduced effective Hamiltonian developed through the fifth order for 28SiH4 and through the fourth order for 29SiH4 and 30SiH4. The observed infrared and Raman transitions have been very well reproduced with a standard deviation of about 0.0004 cm−1 for 28SiH4. Some anomalies in the Hamiltonian expansion have been found, but they did not perturb the analysis.