P-on-N and N-on-P silicon photomultipliers: responsivity comparison in the continuous wave regime

2013

We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse b…

Responsivity measurements of SiC photodiodes

2014

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.

Signal to noise ratio measurements of silicon photomultipliers in the continuous wave regime

2014

We report on our signal to noise ratio (SNR) measurements carried out, in the continuous wave regime, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate.

N-on-P and P-on-N Silicon Photomultipliers: Responsivity comparison in the continuous wave regime

2013

We report on the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type and Ntype substrate respectively. A physical explanation of the experimental results is provided.

Signal to noise ratio measurements of silicon photomultipliers

2014

We report on our signal to noise ratio (SNR) measurements carried out, in the continuous wave regime, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SiPMs are large area detectors consisting of a parallel array of Geiger Mode APDs with individual integrated quenching resistors. Each photodiode is an independent photon counting microcell and is connected to a common analog output to produce a summation signal proportional to the number of detected photons [1], [2]. SNR of SiPMs is expressed by the ratio of the SiPM average signal current and the RMS deviation of the overall current (i.e., the overall shot noise current). The …

Responsivity measurements of SiC Schottky photodiodes

2014

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.

Electro-Optical characterization of Silicon Carbide Schottky photodiodes

2014

Measurements of Silicon Photomultipliers Responsivity

2012

We present some results on the optical characterization of Silicon Photomultipliers designed for medical imaging applications. In particular we will discuss our responsivity measurements performed with very low incident optical power and on a broad spectrum

Measurements of Silicon Photomultipliers Responsivity in Continuous Wave

2012

Signal to Noise Ratio of Silicon Photomultipliers: a study in the Continuous Wave Regime

2014

We report on Signal to Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature …

P-on-N and N-on-P silicon photomultipliers: an in-depth analysis in the continuous wave regime

2013

We report on the electrical and optical comparison, in the continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type (N-on-P class) and N-type (P-on-N class) substrates respectively.