6533b7cefe1ef96bd1256f89

RESEARCH PRODUCT

Effect of humidity on the hysteresis of single walled carbon nanotube field-effect transistors

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description

Single walled carbon nanotube field-effedt transistores (SWCNT FETs) are attributed as possible building blocks for future molecular electronics. But often these transistors seem to randomly display hysteresis in their transfer characteristics. One reason for this is suggested to be water molecules adsorbed to the surface of the gate dielectric in this study we investigate the thysteresis of SWCNT FETs at different relative humidities. We find that SWCNT FETs having atomic layer deposited (ALD) Hf0 2 -Ti0 2 .- Hf0 2 as a gate dielectric retain their. ambient condition hysteresis better in dry N2 environment than the more commonly used SiO 2 gate oxide.