6533b7cefe1ef96bd1257935

RESEARCH PRODUCT

3D modeling of doping from the atmosphere in floating zone silicon crystal growth

Kirils SurovovsJanis VirbulisA. Sabanskis

subject

Materials scienceSiliconDopantDopingchemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences010305 fluids & plasmasInorganic ChemistryMonocrystalline siliconHeat fluxchemistryElectrical resistivity and conductivityChemical physicsCondensed Matter::SuperconductivityFree surface0103 physical sciencesMaterials Chemistry0210 nano-technologyInert gas

description

Abstract Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

yearjournalcountryeditionlanguage
2017-01-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2016.04.048