6533b7cffe1ef96bd125829e
RESEARCH PRODUCT
Crystal growth of Hg1−xMnxSe for infrared detection
C. J. Gómez-garcíaCandid ReigVicente Muñoz-sanjosésubject
Materials sciencebusiness.industryScanning electron microscopeInfraredGeneral EngineeringAnalytical chemistryCrystal growthPhotodetectionMagnetic susceptibilityFourier transform spectroscopyOpticsInfrared detectorFourier transform infrared spectroscopybusinessdescription
In this work, we report on the successfully growing Hg"1"-"xMn"xSe bulk crystals using a mixed, travelling heater method and Bridgman method, two-step procedure. Firstly, and with the aim of reducing Hg high pressure related to the high temperature synthesis reaction between the components in elemental form, HgSe crystals were synthesized and grown by the cold travelling heater method. Secondly, previously sublimated Mn and Se were incorporated to complete the desired composition. Then, the Bridgman growth was carried out by heating the alloy at a temperature of about 880^oC and lowering it at rate of 1mm/h through a gradient of 25^oC/cm. The Hg"1"-"xMn"xSe crystals were characterized by scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffractometry, Fourier transform infrared spectroscopy and magnetic susceptibility measurements. The summary of the experimental results allows us to be optimistic with the potential of Hg"1"-"xMn"xSe as regards using Hg"1"-"xMn"xTe and Hg"1"-"xCd"xTe for infrared photodetection.
year | journal | country | edition | language |
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2007-03-01 | Microelectronics Journal |