6533b7cffe1ef96bd125904e
RESEARCH PRODUCT
High accuracy Raman measurements using the Stokes and anti-Stokes lines
Witold TrzeciakowskiJuan P. Martínez-pastorAndrés Cantarerosubject
SiliconMaterials scienceSiliconRaman SpectraPhononAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementIndium CompoundsMolecular physicsGallium arsenidelaw.inventionGallium Arsenidesymbols.namesakechemistry.chemical_compoundThermo-Optical EffectsCondensed Matter::Materials Sciencelaw:FÍSICA [UNESCO]Laser power scalingSemiconductor Epitaxial LayersLaser Beam EffectsElemental SemiconductorsSilicon ; Germanium ; Elemental Semiconductors ; Gallium Arsenide ; Indium Compounds ; Gallium Compounds ; III-V Semiconductors ; Raman Spectra ; Phonon Spectra ; Semiconductor Epitaxial Layers ; Integrated Circuit Technology ; Deformation ; Laser Beam Effects ; Thermo-Optical EffectsGermaniumUNESCO::FÍSICAIII-V SemiconductorsPhonon SpectraLaserCondensed Matter::Mesoscopic Systems and Quantum Hall EffectIntegrated Circuit TechnologyDeformationchemistryExcited stateGallium CompoundssymbolsDeformation (engineering)Raman spectroscopydescription
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applied biaxial strain, laser power, and temperature. Andres.Cantarero@uv.es ; Juan.Mtnez.Pastor@uv.es
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1997-10-15 |