6533b7d0fe1ef96bd125a2a2

RESEARCH PRODUCT

Electric field driven domain wall transfer in hybrid structures

subject

description

Domain wall (DW) motion devices attracts much interest with their prospective logic and memory applications[1][2]. Present on-chip DW manipulations by a magnetic field of electric currents or electron spin torque raise the problem of high Ohmic energy losses. We show that such a difficulty can be avoided by applying an exchange field H eff to the magnetic layer from the proximate graphene (Gr), instead of using an actual magnetic field. H eff is shown to be dependent on carrier density gradient in Gr, which is easily manipulated with a gate voltage. A novel memory device implementing this concept is designed and modeled, demonstrating switching power well below femto-Joule while maintaining a switch time within 2 nanoseconds.