6533b7d0fe1ef96bd125a2e0
RESEARCH PRODUCT
Simulation of the influence of gas flow on melt convection and phase boundaries in FZ silicon single crystal growth
A. SabanskisJanis Virbulissubject
Marangoni effectArgonMaterials scienceSiliconchemistry.chemical_elementMechanicsCondensed Matter Physicslaw.inventionPhysics::Fluid DynamicsInorganic ChemistrychemistrylawMaterials ChemistryShear stressCrystallizationInert gasHeliumMelt flow indexdescription
Abstract Axisymmetric calculations of inert gas flow in a floating zone puller are carried out using an open source software package OpenFOAM. Transient axisymmetric melt flow in liquid silicon and quasi-stationary shape of silicon phase boundaries are calculated using a specialized program FZone. Additional heat losses at silicon surfaces caused by the gas flow are taken into account for argon and helium, while maintaining the height of molten zone by adjusting inductor current. Cooling causes an increase of electromagnetic force, heat sources and more intense melt flow, while crystallization interface deflection decreases. The shear stress of gas flow is found to be an order of magnitude weaker than electromagnetic and Marangoni forces.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-05-01 | Journal of Crystal Growth |