6533b7d0fe1ef96bd125b9ee
RESEARCH PRODUCT
Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy
Daniel HofstetterFabrizio R. GiorgettaEsther BaumannJ.-f. CarlinEric FeltinF. H. JulienSylvain NicolayMauro MoscaNicolas GrandjeanGottfried StrasserS. GolkaA. LupuG. Pozzovivosubject
Materials sciencebusiness.industryOptical communicationCladding (fiber optics)EpitaxyLambdaAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsMetalWavelengthvisual_artLattice (order)visual_art.visual_art_mediumOptoelectronicsMetalorganic vapour phase epitaxyElectrical and Electronic Engineeringbusinessdescription
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-01-01 | IEEE Photonics Technology Letters |