6533b7d1fe1ef96bd125cd80

RESEARCH PRODUCT

Influence Of The Model Parameters On The Noise Performance Of Double-polysilicon BJTs For Microwave LNA's

A. CaddemiM. Sannino

subject

Noise temperatureEngineeringNoise measurementbusiness.industryDouble polysilicon bipolar junction transistors Low noise amplifiers (LNA) noise modelsY-factorLow noise amplifiers (LNA)Noise figureNoise (electronics)noise modelsDouble polysilicon bipolar junction transistorsNoise generatorPhase noiseElectronic engineeringFlicker noisebusiness

description

In the recent post we have measured the noise and the scattering parameters of several series of double polysilicon BJT's over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. From the experimental data, a noisy circuit model has been extracted based on a T-equivalent network. By means of the correlation matrix techniques, novel analytical expressions of the noise parameters have been derived. As a second step, a sensitivity analysis has been performed for evaluating the influence of each model element on the noise performance. The results show how to improve the characteristics of such devices for a better performance when employed in microwave low-noise amplifiers.

yearjournalcountryeditionlanguage
1997-10-0127th European Microwave Conference and Exhibition
https://doi.org/10.1109/eumc.1997.633712