6533b7d2fe1ef96bd125e927

RESEARCH PRODUCT

Magnetic tunneling junctions with the Heusler compound

A. ConcaMartin JourdanGerhard JakobH. AdrianS. Falk

subject

Auxiliary electrodeMaterials scienceCondensed matter physicsMagnetoresistanceSpin polarizationConductivityengineering.materialCondensed Matter PhysicsHeusler compoundElectronic Optical and Magnetic MaterialsTunnel effectTunnel junctionengineeringQuantum tunnelling

description

Abstract Certain Heusler phases belong to the materials which are discussed as potential half metals. Here, results of tunneling experiments with the full-Heusler alloy Co 2 Cr 0.6 Fe 0.4 Al are presented. The Heusler alloy is used as an electrode of magnetic tunneling junctions. The junctions are deposited by magnetron DC sputtering using shadow mask techniques with AlO x as a barrier and cobalt as counter electrode. Measurements of the magnetoresistive differential conductivity in a temperature range between 4 and 300 K are shown. An analysis of the barrier properties applying the Simmons model to the bias dependent junction conductivity is performed. VSM measurements were carried out to examine the magnetic properties of the samples.

yearjournalcountryeditionlanguage
2005-04-01Journal of Magnetism and Magnetic Materials
https://doi.org/10.1016/j.jmmm.2004.11.473