6533b7d2fe1ef96bd125e934
RESEARCH PRODUCT
Delocalized Nature of theEδ′Center in Amorphous Silicon Dioxide
Gianpiero BuscarinoFranco Mario GelardiSimonpietro Agnellosubject
Materials scienceSiliconGeneral Physics and Astronomychemistry.chemical_elementCrystallographic defectlaw.inventionAmorphous solidDelocalized electronchemistryUnpaired electronlawMössbauer spectroscopyPhysics::Atomic PhysicsAtomic physicsElectron paramagnetic resonanceHyperfine structuredescription
We report an experimental study by electron paramagnetic resonance (EPR) of E(')(delta) point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E(')(delta) center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-03-29 | Physical Review Letters |