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RESEARCH PRODUCT

Atomic layer deposition of LixTiyOz thin films

subject

description

Atomic layer deposition (ALD) was employed to deposit ternary films of LixTiyOz. The film growth at a deposition temperature of 225 °C was studied using both titanium tetra-isoropoxide (Ti(OiPr)4) and titanium tetrachloride (TiCl4) as titanium precursors. Lithium tert-butoxide (LiOtBu) was applied as the lithium source and water was used as the oxygen source for all metal precursors. The type of titanium precursor chosen strongly affected film growth: with TiCl4 the resulting LixTiyOz films were highly air-sensitive and the lithium concentration was low, whereas with Ti(OiPr)4 the films were relatively stable in air and with a lithium content which was easily controlled over a wide range. Film characterization indicated that part of the lithium in the film migrated onto the surface and formed carbonates. Films with suitable lithium contents crystallized into the spinel Li4Ti5O12 structure upon post-deposition annealing.