6533b7d4fe1ef96bd1261d2b

RESEARCH PRODUCT

Theoretical Study on the Diffusion Mechanism of Cd in the Cu-Poor Phase of CuInSe2 Solar Cell Material

Thomas GruhnThomas GruhnClaudia FelserGuido RomaJanos Kiss

subject

Materials scienceAb initioMetadynamicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsHybrid functionalMolecular dynamicsGeneral EnergyEnergy profileChemical physicsVacancy defectPhase (matter)Physical and Theoretical ChemistryDiffusion (business)

description

We have employed first-principles static and molecular dynamics (MD) calculations with semilocal and screened-exchange hybrid density functionals to study the diffusion of Cd in bulk CuIn5Se8, a copper-poor ordered vacancy compound of CuInSe2. The diffusion mechanism and the underlying kinetics/energetics were investigated by combining ab initio metadynamics simulations and nudged elastic band (NEB) calculations. We found that the migration of Cd occurs via a kick-out of Cu atoms, assisted by the pristine vacancies that are constitutive of this compound, and follows a double-hump energy profile. The rate-limiting step has a barrier of about 1 eV at 0 K but reduces to 0.3 eV at 850 K, pointing out non-negligible dynamical effects. Hybrid functional calculations reveal that Cd impurities are doubly positively charged (Cd2+) in p-type and intrinsic conditions. The position of the 0/2+ charge transition level explains why Cd impurities do not constitute deep traps for carriers, making them not harmful for the...

https://doi.org/10.1021/jp4087877