6533b7d5fe1ef96bd1264fbf
RESEARCH PRODUCT
CW and Q-switched diode end-pumped Nd:YAP laser at 1.34 µm. Influence of Nd doping level
Matthieu BoucherJ.p. BoquillonEfstratios GeorgiouO. Mussetsubject
Materials sciencebusiness.industryDopingTi:sapphire laserchemistry.chemical_elementLaserNeodymiumlaw.inventionCrystalchemistrylawOptoelectronicsbusinessDiodedescription
A multi watt CW 1.34 µm diode end-pumped Nd:YAP laser is described. Acoustooptic device is tested to obtain Q-switched operation. The influence of the Nd3+ doping level in YAP crystal on the laser efficiency, in CW and in Q-switched mode, is presented.
year | journal | country | edition | language |
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2001-01-01 | Advanced Solid-State Lasers |