6533b7d6fe1ef96bd1265e25
RESEARCH PRODUCT
Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures
J. C. VaissièreE. StarikovLuca ReggianiMichelangelo ZarconeViktoras GružinskisPavel ShiktorovSusana PerezGaetano FerranteLuca VaraniD. Persano AdornoTomas Gonzalezsubject
EFFICIENCYDEVICESMaterials scienceINPMonte Carlo methodAnalytical chemistry02 engineering and technologySCHOTTKY-BARRIER DIODES01 natural sciencesNoise (electronics)NOISECondensed Matter::Materials Science0103 physical sciencesHigh harmonic generationTHZSILICONELECTRON-TRANSPORTDiode010302 applied physicsbusiness.industryGAASDopingSemiconductor device021001 nanoscience & nanotechnology[SPI.TRON]Engineering Sciences [physics]/ElectronicsHarmonicsHarmonicRADIATIONOptoelectronics0210 nano-technologybusinessdescription
To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
year | journal | country | edition | language |
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2004-04-01 | physica status solidi (c) |