6533b7d6fe1ef96bd1266d81
RESEARCH PRODUCT
Electronic properties and mobile defects distribution in amorphous semiconducting passive films
F. Di QuartoMonica Santamariasubject
Kinetic growth studieMott-Schottky theorySettore ING-IND/23 - Chimica Fisica ApplicataMobile defects distributionPassive filmsdescription
A study of the electronic properties of thin (drop 25 nm) a-WO3 and a-Nb2O5 is presented. Based on theory of amorphous semiconductor Schottky barrier the fitting of admittance curves in a large range of electrode potential (around 9 V) and a.c. frequency (100 Hz - 10 kHz) is performed. A density of electronic state distribution (DOS) is derived, which mimics the mobile defects distribution suggested by the classical high field model of oxides growth.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-01-01 |