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RESEARCH PRODUCT
Finite range scattering of Ni and Zn impurities in Y-123 thin films
Th. KlugeGerhard JakobH. AdrianM. Speckmannsubject
Materials scienceCondensed matter physicsScatteringEnergy Engineering and Power TechnologyConductivityCondensed Matter PhysicsFinite rangeElectronic Optical and Magnetic MaterialsResidual resistivityImpurityElectrical resistivity and conductivityPhase (matter)Electrical and Electronic EngineeringThin filmdescription
Abstract We investigated YBa 2 (Cu 1− z M z ) 3 O 7-δ (M Ni,Zn) thin films and determined the decrease of T c and the increase of residual resistivity due to Cu-site substitution, taking into account the CuO-chain contributions to the total conductivity. Although Zn suppresses T c stronger than Ni by a factor of 2.3 the increase of resistivity differs only slightly. Furthermore the observed resistivities are too high to be explained within scattering from point-like defects. To reconcile these contradictions, we assumed finite size scattering potentials, which lead to scattering phase shifts δ l of higher angular momebtum l > 0. T c -suppression is discussed qalitatively within this picture.
year | journal | country | edition | language |
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1997-08-01 | Physica C: Superconductivity |