6533b7d7fe1ef96bd1267820
RESEARCH PRODUCT
Numerical modelling of the industrial silicon single crystal growth processes
Bernard NackeA. MuiznieksA. Muizniekssubject
Materials scienceSingle crystal growthSiliconchemistryApplied MathematicsGeneral Physics and AstronomyMechanical engineeringchemistry.chemical_elementGeneral Materials ScienceWaferCrystal growthElectronicsEngineering physicsdescription
Silicon wafers produced from the silicon single crystals are the basic material for the manufacturing of various kinds of electronic devices determining the everyday life of the modern society. Silicon single crystals industrially are mainly grown by two methods - by the Czochralski and by the floating zone technique. Both of them involve various physical processes with complex interactions which makes the experimental optimization of the growth techniques a rather hard and expensive task. Therefore, mathematical modelling supported by the rapid increase of the computer power has become an effective means in the development of the industrial crystal growth. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-04-01 | GAMM-Mitteilungen |