6533b7d9fe1ef96bd126c184
RESEARCH PRODUCT
Electrochemically prepared oxides for resistive switching memories
Hiroki HabazakiAndrea ZafforaMonica SantamariaIlia ValovF. Di Quartosubject
Materials sciencebusiness.industryAnodizingOxide02 engineering and technologyElectrolyte010402 general chemistry021001 nanoscience & nanotechnologyElectrochemistry01 natural sciences0104 chemical sciencesAnodeResistive random-access memorychemistry.chemical_compoundSettore ING-IND/23 - Chimica Fisica ApplicatachemistryOptoelectronicsPhysical and Theoretical ChemistryThin film0210 nano-technologybusinessLayer (electronics)description
Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-10-26 | Faraday Discussions |