6533b7dafe1ef96bd126e27f
RESEARCH PRODUCT
Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
Christian StieghorstBarbara KarchesPatricia KrenckelNorbert WiehlC. PlonkaBernard PonsardG. HampelH. GerstenbergStephan RiepeJonas Schönsubject
010302 applied physicsSiliconMetallurgychemistry.chemical_elementdirectional solidification02 engineering and technologysolar silicon021001 nanoscience & nanotechnology01 natural sciencesMaterialien - Solarzellen und TechnologieKristallisation und Waferingtransition metalsSilicium-PhotovoltaikchemistryImpurityPhotovoltaik0103 physical sciencesPhysical and Theoretical ChemistryNeutron activation analysis0210 nano-technologyfeedstockneutron activation analysisdescription
AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-03-14 |