6533b7dafe1ef96bd126e2ee
RESEARCH PRODUCT
On the Schwarzschild Effect in 3D Two‐Photon Laser Lithography
Liang YangChristopher Barner-kowollikChristopher Barner-kowollikMuamer KadicMuamer KadicAlexander MünchingerFrederik MayerEva BlascoMartin WegenerVincent Hahnsubject
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph]Materials science02 engineering and technologyPhotoresist010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesTwo-photon absorptionMolecular physicsAtomic and Molecular Physics and Optics0104 chemical sciencesElectronic Optical and Magnetic Materials[SPI.MAT]Engineering Sciences [physics]/MaterialsOrders of magnitude (time)Laser power scalingDiffusion (business)[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics0210 nano-technologyAbsorption (electromagnetic radiation)Schwarzschild radiusMaskless lithographydescription
International audience; The two‐photon Schwarzschild effect in photoresists suitable for 3D laser lithography is revisited. The study ranges over seven orders of magnitude in exposure time (from 1 µs to 10 s) and investigates a wide variety of different photoresist compositions. For short exposure times (“regime I”), the laser power at the polymerization threshold can scale with the inverse square root of the exposure time, as naively to be expected for two‐photon absorption. Substantial deviations occur, however, for low photoinitiator concentrations. For intermediate exposure times (“regime II”), a Schwarzschild‐type of behavior is found, as discussed previously. For very long exposure times (“regime III”), an unexpected deviation from regime II is found. By presenting numerical solutions of the coupled 3D reaction–diffusion equations, this behavior is explained in terms of the diffusion of oxygen and photoinitiator molecu0les, respectively.
year | journal | country | edition | language |
---|---|---|---|---|
2019-08-27 |