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RESEARCH PRODUCT
Atomic layer deposition of polyimide thin films
Matti PutkonenJenni HarjuojaLauri NiinistöTimo Sajavaarasubject
Atomic layer depositionChemical engineeringChemistryMaterials ChemistryAnalytical chemistryDeposition (phase transition)Lamellar structureGeneral ChemistryThermal treatmentFourier transform infrared spectroscopyThin filmFourier transform spectroscopyPolyimidedescription
The atomic layer deposition (ALD) of different polyimide thin films has been studied. We have demonstrated self-limiting ALD deposition of PMDA–DAH, PMDA–EDA, PMDA–ODA and PMDA–PDA thin films at 160 °C. The maximum deposition rate of 5.8 A cycle−1 was obtained for the PMDA–DAH process. Although the deposition rate was high at 160 °C, a sudden decrease was observed when the temperature was increased. Regardless of the process studied, no film growth was obtained at 200 °C or above. Deposited polyimide films were analysed by FTIR, AFM and TOF-ERDA. According to the FTIR measurements, imide bonds were formed already in as-deposited films indicating polyimide formation without any additional thermal treatment.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-01-01 |