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RESEARCH PRODUCT
Photoelectrochemical study of electrochemically formed semiconducting yttrium hydride (YH3−x)
Carmelo SunseriF. Di QuartoM. C. RomanoSalvatore Piazzasubject
PhotocurrentBand gapHydrideGeneral Chemical EngineeringInorganic chemistryPhotoelectrochemistrychemistry.chemical_elementYttriumMetalchemistryvisual_artBasic solutionElectrochemistryvisual_art.visual_art_mediumPhysical chemistryExtrinsic semiconductordescription
Abstract The first photoelectrochemical study of semiconducting YH 3− x films formed by etching bulk Y metal in 0.5 M H 2 SO 4 solution is reported. The formation of semiconducting hydride having an indirect optical band gap, E g opt , of about 2.35 eV is confirmed by in situ photocurrent spectroscopy. The photoelectrochemical behaviour of such a phase was investigated both in alkaline and in acidic solutions. The flat band potential was estimated to be U fb =−1.25 V/NHE, independent of pH.
year | journal | country | edition | language |
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1999-07-01 | Electrochimica Acta |