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RESEARCH PRODUCT

Fabrication and Characterization of Epitaxial NbN/TaN/NbN Josephson Junctions Grown by Pulsed Laser Ablation

Kartik SenapatiR. C. BudhaniIlari MaasiltaM. R. Nevala

subject

Josephson effectLaser ablationFabricationMaterials sciencebusiness.industrySubstrate (electronics)Chemical vapor depositionCondensed Matter PhysicsEpitaxyElectronic Optical and Magnetic MaterialsPulsed laser depositionRapid single flux quantumOptoelectronicsElectrical and Electronic Engineeringbusiness

description

We report fabrication and characterization of epitaxial NbN/TaN/NbN Josephson junctions grown by pulsed laser ablation. These SNS junctions can be used as elements of rapid-single-flux-quantum (RSFQ) logic, which is a promising technology for high speed digital electronic devices. The NbN/TaN/NbN trilayer films were prepared on a single crystal MgO substrate by pulsed laser ablation, and patterned into junctions using a novel process utilizing e-beam lithography, chemical vapor deposition and e-beam evaporation. The quality of junctions was tested by measuring the temperature dependence of the junctions' IcRn values, observed to be quite close to theoretical values.

https://doi.org/10.1109/tasc.2009.2019030