6533b7ddfe1ef96bd12749f5

RESEARCH PRODUCT

Perimeter leakage current in polymer light emitting diodes

Yassid Ayyad-limongeGermà Garcia-belmonteHenk J. BolinkJosé M. MonteroJuan BisquertEva Maria Barea

subject

chemistry.chemical_classificationMaterials sciencebusiness.industryGeneral Physics and AstronomyPolymerPolymer light emitting diodesLeakage currentsLight emitting diodesPerimeterchemistryPhenyleneMathematics::Metric GeometryOptoelectronicsGeneral Materials SciencebusinessEdge shuntOhmic contactCurrent densityDiodeLeakage (electronics)

description

Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter). © 2008 Elsevier B.V. All rights reserved.

yearjournalcountryeditionlanguage
2009-03-01Current Applied Physics
https://doi.org/10.1016/j.cap.2008.03.018