6533b7ddfe1ef96bd12752b7

RESEARCH PRODUCT

Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

Vincent BayotM. S. FairbanksRichard J. K. TaylorLars SamuelsonB. C. ScannellC. GustinGavin D. R. HallBenoît HackensSylvain BollaertT. M. FromholdIvan ShorubalkoSébastien FanielA. CappyHeiner LinkeCarl V. BrownC. A. MarlowXavier WallartT. P. Martin

subject

PhysicsCondensed matter physicsScatteringConductanceBoundary (topology)Semiconductor deviceUnified ModelCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic Materials[SPI]Engineering Sciences [physics]FractalQuantum dotChaotic scatteringStatistical physics

description

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.

yearjournalcountryeditionlanguage
2006-05-19Physical Review B
https://doi.org/10.1103/physrevb.73.195318