6533b7defe1ef96bd1275b8f
RESEARCH PRODUCT
Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction
F. Di QuartoCarmelo SunseriSalvatore Piazzasubject
Materials sciencebusiness.industryGeneral Chemical EngineeringSchottky barrierOxideElectrolyteAmorphous solidchemistry.chemical_compoundSemiconductorchemistryElectrochemistryOptoelectronicsNiobium oxidebusinessSingle crystalElectrode potentialdescription
Abstract A systematic study of the impedance behaviour of the anodic niobium oxide film/aqueous electrolyte interface was carried out using the lock-in technique at different signal frequencies. The dependence of both components of the impedance on the electrode potential and on frequency is analysed by taking into account the amorphous nature of the films. The lack of long-range order in these oxide layers modifies the physical picture in respect to the case of single crystal semiconductors. A new equivalent circuit has been assumed, based on recent theory of an amorphous semiconductor Schottky barrier. Such a new approach allows the characterization of the interface and the determination of the electronic states distribution within the oxide gap. Possible mistakes arising from the use of models valid for crystalline semiconductors to study these kinds of interfaces are pointed out. The effect of annealing of the films under argon atmosphere as well as the possible nature of the defects in Nb2O5 anodic films are discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1990-01-01 | Electrochimica Acta |