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RESEARCH PRODUCT
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
Adrián Hierro CanoGema Tabares JimenezM. López PonceJosé María Ulloa HerreroElias Muñoz MerinoAlejandro Kurtz De GriñóE. MuñozV. Marín BorrasVicente Muñoz SanjoséJean Michelle Chauveausubject
010302 applied physicsTelecomunicacionesMaterials sciencebusiness.industrySchottky diodePhotodetector02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPhotodiodelaw.inventionResponsivityWavelengthSemiconductorlaw0103 physical sciencesOptoelectronicsGrain boundary0210 nano-technologybusinessMolecular beam epitaxydescription
Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis, and we analyze and compare the physical mechanisms underlying the photodetector behavior. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-03-15 |