6533b7defe1ef96bd1275ef5

RESEARCH PRODUCT

Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy

Samridh JaiswalCarolyna HepburnDafiné RavelosonaGianfranco DurinLiza Herrera DiezMohamed BelmeguenaiJürgen LangerBoyu ZhangGerhard JakobN. VernierXueying ZhangWang LinBerthold OckerArianna CasiraghiS. M. ChérifMamour SallWeisheng ZhaoTao XingMathias KläuiAndrei A. StashkevichYves RoussignéXiaoxuan ZhaoXiaoxuan Zhao

subject

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)SpintronicsMagnetic domainCondensed matter physics530 PhysicsPerpendicular magnetic anisotropy02 engineering and technology530 Physik021001 nanoscience & nanotechnology01 natural sciences[SPI]Engineering Sciences [physics]Domain wall (magnetism)Creep[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]0103 physical sciencesPerpendicular anisotropyIrradiation[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyAnisotropyComputingMilieux_MISCELLANEOUS

description

We study the influence of He+ irradiation induced interface intermixing on magnetic domain wall (DW) dynamics in W-CoFeB (0.6 nm)-MgO ultrathin films, which exhibit high perpendicular magnetic anisotropy and large Dzyaloshinskii-Moriya interaction (DMI) values. Whereas the pristine films exhibit strong DW pinning, we observe a large increase in the DW velocity in the creep regime upon He+ irradiation, which is attributed to the reduction of pinning centers induced by interface intermixing. Asymmetric in-plane field-driven domain expansion experiments show that the DMI value is slightly reduced upon irradiation, and a direct relationship between DMI and interface anisotropy is demonstrated. Our findings provide insights into the material design and interface control for DW dynamics, as well as for DMI, enabling the development of high-performance spintronic devices based on ultrathin magnetic layers.

10.1063/1.5121357https://hal.science/hal-02332104