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RESEARCH PRODUCT
Temperature dependance of the generation and decay of E’ centers induced in silica by 4.7eV laser radiation
Marco CannasFabrizio Messinasubject
Arrhenius equationSiliconChemistryAnnealing (metallurgy)Dangling bondchemistry.chemical_elementsilica point defectsActivation energyRadiationCondensed Matter PhysicsLaserMolecular physicsElectronic Optical and Magnetic Materialslaw.inventionsymbols.namesakeNuclear magnetic resonancelawMaterials ChemistryCeramics and CompositessymbolsIrradiationSilica laser effects annealingdescription
We report a study of the generation of silicon dangling bonds (E' centers) induced in fused silica by 4.7 eV laser irradiation in the 10 200 K the induced defects undergo a post-irradiation decay due to their reaction with mobile H(2). The interplay between generation and annealing gives rise to a bell-shaped temperature dependence of the concentration of induced E' centers, peaking at 250 K
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-07-01 |