6533b820fe1ef96bd12798d7
RESEARCH PRODUCT
Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group
Anatoli I. PopovSergii KovachovValentina PeregudovaAlma DauletbekovaYana SuchikovaIhor Bohdanovsubject
Materials scienceCondensed matter physicsAnodizingbusiness.industryElectrochemical machiningGallium arsenidechemistry.chemical_compoundSemiconductorchemistryEtchingIndium phosphidebusinessCurrent densityVoltagedescription
In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-05-19 | 2021 IEEE 12th International Conference on Electronics and Information Technologies (ELIT) |