6533b820fe1ef96bd127a2c8

RESEARCH PRODUCT

Amorphous semiconductor-electrolyte junction

Carmelo SunseriF. Di QuartoR. D'agostinoSalvatore Piazza

subject

Photocurrentbusiness.industryOxideNiobiumchemistry.chemical_elementElectrolyteAmorphous solidLight intensitychemistry.chemical_compoundWavelengthOpticschemistryDensity of statesOptoelectronicsbusiness

description

Abstract The photoelectrochemical behaviour of amorphous anodic films on niobium (a-Nb 2 O 5 ) grown in a wide range of thicknesses (20 ⩽ d ox ⩽ 25 nm) is presented. The influence of the wavelength, light intensity and film thickness on the photocharacteristics of the a-Nb 2 O 5 /electrolyte junction is investigated. Expressions for the photocurrent curves under steady-state conditions are derived by assuming a variable efficiency of photocarrier generation and different distributions of the electrical potential inside the amorphous films. The influence of the light intensity on the photocharacteristics and the existence of a sub-band-gap photoresponse are explained by assuming a finite density of states within the mobility gap of a-Nb 2 O 5 films.

https://doi.org/10.1016/0022-0728(87)80102-x