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RESEARCH PRODUCT
Amorphous semiconductor-electrolyte junction
Carmelo SunseriF. Di QuartoR. D'agostinoSalvatore Piazzasubject
Photocurrentbusiness.industryOxideNiobiumchemistry.chemical_elementElectrolyteAmorphous solidLight intensitychemistry.chemical_compoundWavelengthOpticschemistryDensity of statesOptoelectronicsbusinessdescription
Abstract The photoelectrochemical behaviour of amorphous anodic films on niobium (a-Nb 2 O 5 ) grown in a wide range of thicknesses (20 ⩽ d ox ⩽ 25 nm) is presented. The influence of the wavelength, light intensity and film thickness on the photocharacteristics of the a-Nb 2 O 5 /electrolyte junction is investigated. Expressions for the photocurrent curves under steady-state conditions are derived by assuming a variable efficiency of photocarrier generation and different distributions of the electrical potential inside the amorphous films. The influence of the light intensity on the photocharacteristics and the existence of a sub-band-gap photoresponse are explained by assuming a finite density of states within the mobility gap of a-Nb 2 O 5 films.
year | journal | country | edition | language |
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1987-08-01 | Journal of Electroanalytical Chemistry and Interfacial Electrochemistry |