6533b821fe1ef96bd127c388

RESEARCH PRODUCT

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

Ronald D. SchrimpfFrancesco PintacudaVeronique Ferlet-cavroisJean-marie LauensteinC.j. NicklawAri VirtanenArto JavanainenAlexandre Louis BosserKenneth F. GallowayRobert A. ReedMarek TurowskiRobert A. Weller

subject

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects

description

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

yearjournalcountryeditionlanguage
2016-09-01
10.1109/radecs.2016.8093100https://doi.org/10.1109/RADECS.2016.8093100