6533b823fe1ef96bd127f379

RESEARCH PRODUCT

Theoretical simulations of I-center annealing in KCl crystals

Anatoli I. PopovRoberts I. EglitisEugene A. Kotomin

subject

Nuclear and High Energy PhysicsRadiationDiffusion transportF-CenterCondensed matter physicsAnnealing (metallurgy)ChemistryKineticsElectronCondensed Matter PhysicsCrystallographic defectCrystallographyCoulombGeneral Materials ScienceQuantum tunnelling

description

Abstract This paper focus on theory of diffusion-controlled annealing of the most mobile radiation-induced defects—I centers—in KCl crystals. The kinetics of annealing of pairs of close oppositely charged defects—α-I centers (arising as a result of the tunnelling recombination of primary Frenkel defects—F and H centers) and F-I centers (when H center trap electrons) is calculated taking into account defect diffusion and Coulomb/elastic interaction. Special attention is paid to the conditions under which multi-stage annealing arises; theoretical results are compared with the relevant experimental data.

yearjournalcountryeditionlanguage
1995-12-01Radiation Effects and Defects in Solids
https://doi.org/10.1080/10420159508227188