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RESEARCH PRODUCT
Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser
Alexander K. FedotovJanis TeterisGianpiero BuscarinoAnatoly N. TrukhinD.l. Griscomsubject
Electron mobilityPhotoluminescenceChemistryDopingAnalytical chemistryCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsPhotosensitivityImpurityMaterials ChemistryCeramics and CompositesIrradiationRadiation effects Glasses Laser–matter interactions Optical spectroscopy Defects Optical properties Absorption Lasers Luminescence Photoinduced effects Time resolved measurements Oxide glasses Alkali silicates Aluminosilicates Silica Silicates Radiation Electron spin resonanceSpectroscopyLuminescencedescription
Abstract Photosensitivity of SiO 2 –Al and SiO 2 –Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO 2 –Al and transient, life time about one hour, visible darkening in the case of SiO 2 –Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO 2 –Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO 2 –Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-07-01 |