6533b824fe1ef96bd128161c

RESEARCH PRODUCT

High temperature oxidation of higher manganese silicides

Gunstein SkomedalNaureen AkhtarAntoine De Padoue ShyikiraPeter Hugh MiddletonTor Oskar Saetre

subject

Materials scienceDopantScanning electron microscope020209 energyGeneral Chemical EngineeringAnalytical chemistrySpark plasma sinteringchemistry.chemical_element02 engineering and technologyGeneral ChemistryManganeseAtmospheric temperature range021001 nanoscience & nanotechnologyHot pressingThermogravimetryVDP::Teknologi: 500chemistryX-ray photoelectron spectroscopy0202 electrical engineering electronic engineering information engineeringGeneral Materials Science0210 nano-technology

description

Abstract The oxidation kinetics and mechanisms of higher manganese silicides (HMS) MnSi1.75, MnSi (1.75-x)Gex, MnSi(1.75-x)Alx (with x = 0.005 and 0.01)were studied and the effects of densification methods and dopant concentration discussed. Oxidation experiments were conducted using thermogravimetry (TGA), while post characterization with X-ray Photoelectron Spectroscopy (XPS) and Scanning Electron Microscope (SEM) showed that spark plasma sintering (SPS) is a better densification method than hot pressing (HP). Except for undoped HMS, HMS doped with 0.5at% Ge had the lowest oxidation rate. Stable formation of a SiO2 protective layer was the main reason for improved oxidation resistance in air in the temperature range 200 °C-500 °C.

yearjournalcountryeditionlanguage
2021-06-01
10.1016/j.corsci.2021.109327https://hdl.handle.net/11250/2837304