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RESEARCH PRODUCT

Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

Gerardo Contreras-puenteJ.r. Aguilar-hernándezN. Campos-riveraG. Santana-rodrigezVirginia SánchezMayahuel OrtegaAndrés CantareroJ. M. RecioE. Hernandez-cruzMáximo López-lópezK. JonesR. Mendoza-pérez

subject

Materials scienceLaser ablationScanning electron microscopeEnergy-dispersive X-ray spectroscopyAnalytical chemistryGallium nitridesymbols.namesakechemistry.chemical_compoundchemistrysymbolsThin filmRaman spectroscopyHigh-resolution transmission electron microscopyMolecular beam epitaxy

description

We present in this work the characterization studies carried on GaN — thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.

yearjournalcountryeditionlanguage
2011-06-012011 37th IEEE Photovoltaic Specialists Conference
https://doi.org/10.1109/pvsc.2011.6186008