6533b825fe1ef96bd12826de
RESEARCH PRODUCT
Epitaxy of thin films of the Heusler compound
Martin JourdanC. HerbortH. AdrianA. Concasubject
Condensed matter physicsMagnetic momentChemistryAnalytical chemistrySputter depositionengineering.materialCondensed Matter PhysicsEpitaxyHeusler compoundInorganic ChemistryPhysical vapor depositionMaterials ChemistryengineeringThin filmLayer (electronics)Deposition (law)description
Abstract Epitaxial thin films of the highly spin polarized Heusler compound Co 2 Cr 0.6 Fe 0.4 Al are deposited by DC magnetron sputtering. It is shown by XRD and TEM investigations how the use of an Fe buffer layer on MgO(1 0 0) substrates supports the growth of highly ordered Co 2 Cr 0.6 Fe 0.4 Al at low deposition temperatures. The as-grown samples show a relatively large ordered magnetic moment of μ ≃ 3.0 μ B / f . u . providing evidence for a low level of disorder.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-02-01 | Journal of Crystal Growth |