6533b826fe1ef96bd1284f81
RESEARCH PRODUCT
Oxide growth and tunneling characteristics of Sn-SnO x -Sn junctions
H. WehrK. Knorrsubject
Thermal oxidationMaterials scienceScanning tunneling spectroscopyOxideAnalytical chemistryConductivityCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsMetalchemistry.chemical_compoundchemistryvisual_artvisual_art.visual_art_mediumQuantum tunnellingdescription
Sn—SnOx—Sn tunneling junctions were prepared by thermal oxidation of vacuum deposited Sn-films. The thickness growth of the oxide was followed by ellipsometric measurements. From logarithmic conductivity measurements the barrier heights were determined. The tunneling characteristic could be well described by the two-band-tunneling model using a value of 0.14 for the ratio of the effective masses in the oxide and the metal.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1979-03-01 | Zeitschrift f�r Physik B Condensed Matter and Quanta |